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gap. The LEDs realized using two differently doped semiconductors that are the same material is called a homojunction. When they are realized using different. homojunction and heterojunction materials, cross sectional measurements are advantageous. . This includes the fabrication of LEDs, lasers, photodiodes, and . Major issues in regular (homojunction) LEDs: high concentration of electrons and holes is hardly achievable due to diffusion (the characteristic length of.

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The figure reveals an optimum active region thickness of 0.

Part b shows p-n junction displacement caused by high Zn doping of the upper cladding region after Schubert et al. An n-type to n-type junction, for example, would be considered a homojunction if the doping levels are different. Dependence of the luminous efficiency of an AlGaInP double heterostructure LED emitting at nm on the active layer doping concentration after Sugawara et al.

Cathodo-luminescence image of a 0.

Chapter 7

The different doping level will cause band bendingand depletion region will be formed at the interface, as shown in the right figure. Dependence of the luminous efficiency of an AlGaInP double heterostructure LED emitting at nm on n-type confinement layer doping concentration after Sugawara et al. Dependence of the internal differential quantum efficiency emitted photons per injected electron on temperature for homoiunction p-type doping levels in the cladding layer after Kazarinov and Pinto, December Learn how and when to remove this template message.


This page was last edited on 14 Augustat In homojunctions, carriers diffuse, on average, over the diffusion lengths Ln and Lp before recombining. In homojunctions, carriers are distributed over the diffusion length. Methods for evaluating diode series resistance. Illustration of a double heterostructure consisting of a bulk or quantum well active region and two confinement layers.

Unsourced material may be challenged and removed. Carrier capture and escape in a double hetero- structure. Fermi level EFn and subband level E0 in a a double heterostructure and b a quantum well structure. The Al content in the electron-blocking layer is higher than in the p-type confinement layer. Also shown is the carrier distribution in the active layer. Illustration of two crystals with mismatched hokojunction constant resulting in dislocations at or near the interface between the two semiconductors.

Optical intensity emitted by In0.

Chapter 4

Retrieved from ” https: The confinement layers are frequently called cladding layers. Views Read Edit View history.

P-n junction displacement process caused by excessive doping of the cladding region. Band diagram of a an abrupt double heterostructure and b a graded double heterostructure. By hojojunction this site, you agree to the Terms of Use and Privacy Policy. Room-temperature current-voltage characteristics of p-n junctions made from different semiconductors. In most practical cases a homojunction occurs at the interface between an n-type donor doped and p-type acceptor doped semiconductor such as siliconthis is called a p-n junction.

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but typically have different doping. In heterojunctions, carriers are confined to the well region. Under forward bias conditions, minority carriers diffuse into the neutral re- gions where they recombine.



Free carrier distribution in a a homojunction and b a heterojunction under forward bias conditions. Band diagram of a forward-biased double heterostructure.

Band diagram of a an abrupt n-type-n-type heterojunction and b a graded heterojunction of two semiconductors with different bandgap energy.

P-n homojunction under a zero and b forward bias. This article does not cite any sources.

Please help improve this article by adding citations to reliable sources. Articles lacking sources from December All articles lacking sources. Dependence of the luminous efficiency of an AlGaInP double heterostructure LED emitting at nm on the p-type confinement layer doping concentration after Sugawara et al.

This is not a necessary condition as the only requirement is that the same semiconductor same band gap is found on both sides of the junction, in contrast to a heterojunction.

The p-type confinement layer consists of a lightly doped layer close to the active region and a higher doped layer further away from the active layer adapted from Kazarinov and Pinto, The abrupt junction is more resistive than the graded junction due to the electron barrier forming at the abrupt junctions after Schubert et al.

The structure uses Zn as a p-type dopant. The dark lines forming a cross-hatch pattern are due to misfit dislocations homojunctioon Fitzgerald et al. Part a shows no p-n junction displacement.

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